Samsung Electronics announced on Thursday that it has begun mass-producing new memory chips for an unnamed automaker, which will be used to support a variety of linked capabilities like as autonomous driving. Chips with 2-gigabyte GDDR6 graphic dynamic random access memory and 128-gigabyte universal flash storage are part of the new lineup. Both items are built to accommodate self-driving features, such as enhanced driver aid systems. In 2017, Samsung announced the first universal flash storage for self-driving cars in the industry.
Samsung also revealed a new series of in-car entertainment devices. 256-gigabyte ball grid array solid-state drives of which read seven times faster and write twice as fast as embedded MultiMediaCards. Furthermore, its 2-gigabyte GDDR6 graphic DRAM has a transfer rate of up to 14 gigabits per second per pin, making it suitable for both automotive infotainment and autonomous driving. Both devices are utilised in servers and accelerators powered by artificial intelligence.
“With the recent proliferation of electric vehicles and the rapid advancement of infotainment and autonomous driving systems, the semiconductor automotive platform is facing a paradigm shift,” said Han Jin-man, executive vice president who leads Memory Global Sales & Marketing at Samsung Electronics.
Han also mentioned that chip replacement cycles are getting shorter, necessitating the need for automotive memory solutions that achieve server-class performance.
According to Samsung, all new automotive memory solutions have passed the AEC-Q100 accreditation, allowing for stable operation in temperatures ranging from minus 40 degrees Celsius to 105 degrees Celsius, as well as client evaluations.
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