Samsung 1TB eUFS Can Bring Notebook-like Experience to Smartphones

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Cheol Choi, executive vice president of memory sales and marketing at Samsung Electronics also claims that it will support the timely launches of upcoming flagship smartphones

It has been reported that the Korean electronic giant,Samsung Electronics has started  large scale production of  the industry’s first one-terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for next-generation mobile applications.It had introduced the first eUFS solution four years back.

Cheol Choi, executive vice president of memory sales and marketing at Samsung Electronics had said that the 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices.Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.

Same size as 512 GB version

It will be offering 1TB eUFS within the same size (11.5mm x 13.0mm) as the 512GB version. The eUFS was developed by combining 16 stacked layers of Samsung’s most advanced 512-gigabit (Gb) V-NAND flash memory and a newly developed proprietary controller. As per information,the smartphone users will now be able to store 260 10-minute videos in 4K UHD (3840×2160) format, whereas the 64GB eUFS widely used in many current high-end smartphones is capable of storing 13 videos of the same size.

The 1TB eUFS offers up to 1,000 megabytes per second (MB/s).New eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD),5GB-sized full HD videos can be offloaded to an NVMe SSD in as fast as five seconds, which is 10 times the speed of a typical microSD card.

Furthermore, the random read speed has increased by up to 38 per cent over the 512GB version, clocking in at up to 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second and will enable smartphone users to take full advantage of the multi-camera capabilities in today and tomorrow’s flagship models.

Samsung plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea in the first half of 2019 to tap the anticipated demand for the 1TB eUFS from mobile device manufacturers around the world.